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ST2305A - P Channel Enhancement Mode MOSFET

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Description

ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST2305A
Manufacturer Stanson Technology
File Size 176.52 KB
Description P Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2305A Datasheet
Additional preview pages of the ST2305A datasheet.

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P Channel Enhancement Mode MOSFET ST2305A -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z 3 D G 1 1.Gate 2.Source S 2 3.Drain z z z z z -15V/-3.5A, RDS(ON) = 45m-ohm (Typ.) @VGS = -4.5V -15V/-3.0A, RDS(ON) = 55m-ohm @VGS = -2.5V -15V/-2.0A, RDS(ON)= 90m-ohm @VGS=-1.
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