The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
STP413D
P Channel Enhancement Mode MOSFET
-12.0A
DESCRIPTION
STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
l -40V/-12.0A, RDS(ON) = 36mΩ (Typ.) @VGS = -10V
l -40V/-8.0A, RDS(ON) = 52mΩ @VGS =-4.
STP413D Datasheet
