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STP4925 - Dual P-Channel Enhancement Mode MOSFET

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Description

STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP4925
Manufacturer Stanson Technology
File Size 427.24 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP4925 Datasheet
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STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management, and other battery powered circuits where high-side switching PIN CONFIGURATION SOP-8 FEATURE l -30V/-7.2A, RDS(ON) = 20mΩ (Typ.) @VGS =-10V l -30V/-5.6A, RDS(ON) = 25mΩ @VGS = -4.
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