STP4925 Datasheet PDF | Stanson Technology

Stanson Technology STP4925

STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Part No.	STP4925
Datasheet	STP4925 Download
Manufacturer	Stanson Technology
Description	Dual P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

These devices are particularly suited for low voltage application, notebook computer power management, and other battery powered circuits where high-side switching PIN CONFIGURATION SOP-8 FEATURE l -30V/-7.2A, RDS(ON) = 20mΩ (Typ.) @VGS =-10V l -30V/-5.6A, RDS(ON) = 25mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SOP-8 Y：Year Code A：date Code B：Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STP4925 2009. V1 STP4925 Dual P Channel Enhancement Mode MOSFET -7.2A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Te...