Datasheet Summary
Dual P Channel Enhancement Mode MOSFET
-0.45A
DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION SOT-523 / SC-89
FEATURE
-20V/-0.45A, RDS(ON) =520ohm @VGS =-4.5V
-20V/-0.35A, RDS(ON) =700ohm @VGS =-2.5V
-20V/-0.25A...