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STP1013 - MOSFET

General Description

STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STP1013
Manufacturer Stanson Technology
File Size 160.09 KB
Description MOSFET
Datasheet download datasheet STP1013 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION SOT-523 / SC-89 FEATURE -20V/-0.45A, RDS(ON) =520ohm @VGS =-4.5V -20V/-0.35A, RDS(ON) =700ohm @VGS =-2.5V -20V/-0.25A, RDS(ON) =950ohm @VGS =-1.