Datasheet Details
| Part number | STP3481 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 417.91 KB |
| Description | P Channel Enhancement Mode MOSFET |
| Datasheet | STP3481_StansonTechnology.pdf |
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Overview: P Channel Enhancement Mode MOSFET STP3481 -5.2A.
| Part number | STP3481 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 417.91 KB |
| Description | P Channel Enhancement Mode MOSFET |
| Datasheet | STP3481_StansonTechnology.pdf |
|
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The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
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