STP3481 Datasheet | Stanson Technology

P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE z z z z z -30V/-5.2A, RDS(ON) = 55m-ohm @VGS = -10V -30V/-4.2A, RDS(ON) = 75m-ohm @VGS = -4.5V Super high density cell design...