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STP3481 - P Channel Enhancement Mode MOSFET

General Description

The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP3481
Manufacturer Stanson Technology
File Size 417.91 KB
Description P Channel Enhancement Mode MOSFET
Datasheet download datasheet STP3481 Datasheet

Full PDF Text Transcription (Reference)

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P Channel Enhancement Mode MOSFET STP3481 -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE z z z z z -30V/-5.2A, RDS(ON) = 55m-ohm @VGS = -10V -30V/-4.2A, RDS(ON) = 75m-ohm @VGS = -4.