Datasheet Details
| Part number | STP3467ST6RG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 809.29 KB |
| Description | MOSFET |
| Datasheet | STP3467ST6RG STP3467 Datasheet (PDF) |
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Overview: STP3467 P Channel Enhancement Mode MOSFET -5.2A.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | STP3467ST6RG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 809.29 KB |
| Description | MOSFET |
| Datasheet | STP3467ST6RG STP3467 Datasheet (PDF) |
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The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| STP3467 | MOSFET |
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