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STP3467ST6RG - MOSFET

Download the STP3467ST6RG datasheet PDF. This datasheet also covers the STP3467 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP3467-StansonTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STP3467ST6RG
Manufacturer Stanson Technology
File Size 809.29 KB
Description MOSFET
Datasheet download datasheet STP3467ST6RG Datasheet

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Other Datasheets by Stanson Technology

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P D SD FEATURE ◆ -20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V ◆ -20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V ◆ -20V/-1.7A, RDS(ON)=140mohm@VGS=-1.