The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STP3467 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 809.29 KB |
| Description | MOSFET |
| Datasheet |
 STP3467 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STP3401 | P-Channel Enhancement Mode MOSFET | Semtron |
| STP3401A | P-Channel Enhancement Mode MOSFET | Semtron |
| STP3401AS | Single P-Channel MOSFET | Semtron |
| STP3401AS-TRG | P-Channel MOSFET | VBsemi |
| STP3401S | Single P-Channel MOSFET | Semtron |
| Part Number | Description |
|---|---|
| STP3467ST6RG | MOSFET |
| STP3481 | P Channel Enhancement Mode MOSFET |
| STP3052D | MOSFET |
| STP1013 | MOSFET |
| STP413D | P-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
