Datasheet Details
| Part number | STP3467 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 809.29 KB |
| Description | MOSFET |
| Datasheet | STP3467-StansonTechnology.pdf |
|
|
Overview: STP3467 P Channel Enhancement Mode MOSFET -5.2A.
| Part number | STP3467 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 809.29 KB |
| Description | MOSFET |
| Datasheet | STP3467-StansonTechnology.pdf |
|
|
|
The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| STP3467ST6RG | MOSFET |
| STP3481 | P Channel Enhancement Mode MOSFET |
| STP3052D | MOSFET |
| STP1013 | MOSFET |
| STP413D | P-Channel Enhancement Mode MOSFET |
| STP4189D | MOSFET |
| STP4435 | MOSFET |
| STP4925 | Dual P-Channel Enhancement Mode MOSFET |
| STP601 | P-Channel Enhancement Mode MOSFET |
| STP601D | P-Channel Enhancement Mode MOSFET |