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STP3052D - MOSFET

General Description

STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

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Datasheet Details

Part number STP3052D
Manufacturer Stanson Technology
File Size 656.01 KB
Description MOSFET
Datasheet download datasheet STP3052D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications. PIN CONFIGURATION (D-PAK) FEATURE TO-252 TO-251 -30V/-25.0A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V -30V/-16.0A, RDS(ON) = 78mΩ @VGS =-5.