ST3400 Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23-3L 3 D G 1 1.Gate 2.Source S 2 3.Drain FEATURE z z z z z z 30V/5.8A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V 30V/4.8A, RDS(ON) = 33mΩ @VGS = 4.5V 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L .. A0YA 1 Y: Year Code 2 A: Week Code ORDERING INFORMATION Part Number ST3400S23RG Package SOT-23-3L Part Marking A0YA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST3400S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb - Free 1 120 Bentley Square, Mountain View, Ca 94040 USA http://.stnasontech. STN3400 2006. V1 N Channel Enhancement Mode MOSFET 5.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient .. Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA Typical 30 ±12 5.8 3.5 25 1.7 2.0 1.3 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W TA=25℃ TA=70℃ 2 120 Bentley Square, Mountain View, Ca 94040 USA http://.stnasontech. STN3400 2006. V1 N Channel Enhancement Mode MOSFET 5.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate...