ST3400SRG Datasheet PDF | Stanson Technology

Stanson Technology ST3400SRG

The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching.

Part No.	ST3400SRG
Datasheet	ST3400SRG Download
Manufacturer	Stanson Technology
Description	N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 FEATURE 30V/5.8A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V 30V/4.8A, RDS(ON) = 30mΩ @VGS = 4.5V 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design A0YA 1 2 Y: Year Code A: Week Code 1 120 Bentley Square, Mountain View, Ca 94040 USA STN3400SRG 2009. V1 ST3400SRG N Channel Enhancement Mode MOSFET 5.8A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±12 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 5.8 3.5 Pulsed Drain Current IDM 25 Continuous Source Current (Diode Conduction) IS 1.7 Power Dissipation TA=25℃ TA=70℃ PD 2.0 1.3 Operation Junction Temperature TJ 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 90 Unit V V A A A W ℃ ℃ ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA STN3400SRG 2009.