ST3406 Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z z z S 2 2.Source 3.Drain z z 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V 30V/4.6A, RDS(ON) = 36mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 D G 1 1.Gate PART MARKING SOT-23-3L .. A6YA 1 Y: Year Code 2 A: Week Code ORDERING INFORMATION Part Number ST3406S23RG Package SOT-23-3L Part Marking A6YA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. ST3406 2006. V1 N Channel Enhancement Mode MOSFET 5.4A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient .. Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 5.4 3.2 25 1.7 2.0 1.3 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W TA=25℃ TA=70℃ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. ST3406 2006. V1 N Channel Enhancement Mode MOSFET 5.4A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless...