ST3406SRG Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G 1 S 2 FEATURE 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V 30V/4.6A, RDS(ON) = 38mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 A6YA 12 Y: Year Code A: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech....