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ST3406SRG - N Channel Enhancement Mode MOSFET

Description

ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST3406SRG
Manufacturer Stanson Technology
File Size 319.76 KB
Description N Channel Enhancement Mode MOSFET
Datasheet download datasheet ST3406SRG Datasheet

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ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G 1 S 2 FEATURE 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V 30V/4.6A, RDS(ON) = 38mΩ @VGS = 4.
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