Stanson Technology ST3406SRG
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.| Part No. | ST3406SRG |
|---|---|
| Datasheet | ST3406SRG Download |
| Manufacturer |  Stanson Technology |
| Description | N Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G 1 S 2 FEATURE 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V 30V/4.6A, RDS(ON) = 38mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 A6YA 12 Y: Year Code A: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA
