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ST3402 - N Channel Enhancement Mode MOSFET

Description

ST3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST3402
Manufacturer Stanson Technology
File Size 415.85 KB
Description N Channel Enhancement Mode MOSFET
Datasheet download datasheet ST3402 Datasheet

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N Channel Enhancement Mode MOSFET ST3402 4A DESCRIPTION ST3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z z z S 2 2.Source 3.Drain z z z 30V/2.8A, RDS(ON) = 58mΩ @VGS = 10V 30V/2.3A, RDS(ON) = 65mΩ @VGS = 4.5V 30V/1.5A, RDS(ON) = 105mΩ @VGS = 2.
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