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ST2304 Datasheet 3.2a N-channel Enhancement Mode MOSFET

Manufacturer: Stanson Technology

Overview: DESCRIPTION ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number ST2304
Manufacturer Stanson Technology
File Size 749.44 KB
Description 3.2A N-Channel Enhancement Mode MOSFET
Datasheet ST2304 ST2304SRG Datasheet (PDF)

General Description

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required.

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