ST2304 Datasheet PDF | Stanson Technology

Stanson Technology ST2304

ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.

Part No.	ST2304
Datasheet	ST2304 Download
Manufacturer	Stanson Technology
Description	3.2A N-Channel Enhancement Mode MOSFET
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DESCRIPTION

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE 30V/3.2A, RDS(ON) = 44m-ohm (Typ.) @VGS = 10.0V 30V/2.0A, RDS(ON) = 60m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 04YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2304SRG 2005. V1 ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±20 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 3.2 2.6 Pulsed Drain Current IDM 10 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ 1.20 1.20 0.8 150 Storgae Temperature Ra...