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ST2304SRG - 3.2A N-Channel Enhancement Mode MOSFET

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Description

ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST2304SRG
Manufacturer Stanson Technology
File Size 749.44 KB
Description 3.2A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2304SRG Datasheet
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DESCRIPTION ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE 30V/3.2A, RDS(ON) = 44m-ohm (Typ.) @VGS = 10.0V 30V/2.0A, RDS(ON) = 60m-ohm @VGS = 4.
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