ST2304SRG Datasheet | Stanson Technology

DESCRIPTION N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE 30V/3.2A, RDS(ON) = 44m-ohm (Typ.) @VGS = 10.0V 30V/2.0A, RDS(ON) = 60m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 04YA Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST2304SRG 2005. V1 N Channel Enhancement Mode MOSFET 3.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±20 Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ 3.2 2.6 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃...