Datasheet Details
| Part number | ST2304SRG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 749.44 KB |
| Description | 3.2A N-Channel Enhancement Mode MOSFET |
| Datasheet | ST2304SRG-StansonTechnology.pdf |
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Overview: DESCRIPTION ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench.
| Part number | ST2304SRG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 749.44 KB |
| Description | 3.2A N-Channel Enhancement Mode MOSFET |
| Datasheet | ST2304SRG-StansonTechnology.pdf |
|
|
|
ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required.
| Part Number | Description |
|---|---|
| ST2304 | 3.2A N-Channel Enhancement Mode MOSFET |
| ST2300 | N-Channel Enhancement Mode MOSFET |
| ST2300SRG | N-Channel Enhancement Mode MOSFET |
| ST2301 | P Channel Enchancement Mode MOSFET |
| ST2301A | P-Channel Enhancement Mode MOSFET |
| ST2302 | 3.6A N-Channel Enchancement Mode MOSFET |
| ST2303 | P Channel Enchancement Mode MOSFET |
| ST2303SRG | P-Channel Enhancement Mode MOSFET |
| ST2305 | P Channel Enchancement Mode MOSFET |
| ST2305A | P Channel Enhancement Mode MOSFET |