STP2327 Datasheet | STANSON

P Channel Enhancement Mode MOSFET -1.5A DESCRIPTION STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-6L FEATURE l -100V/-1.5.0A, RDS(ON) = 520m-ohm (Typ.) @VGS = -10V l -100V/-0.5.0A, RDS(ON) = 600m-ohm @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23-6L package design PART MARKING Y: Year Code A: date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. STP2327 2013. Rev.1 P Channel Enhancement Mode MOSFET -1.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS -100 Gate-Source Voltage Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM ±20 -1.5 -1.2 -4.5 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃...