Datasheet Details
| Part number | STP2327 |
|---|---|
| Manufacturer | STANSON |
| File Size | 517.20 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | STP2327-StansonTechnology.pdf |
|
|
Overview: STP2327 P Channel Enhancement Mode MOSFET -1.5A.
| Part number | STP2327 |
|---|---|
| Manufacturer | STANSON |
| File Size | 517.20 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | STP2327-StansonTechnology.pdf |
|
|
|
STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
| Part Number | Description |
|---|---|
| STP2301 | P-Channel Enhancement Mode MOSFET |
| STP4189D | P-Channel Enhancement Mode MOSFET |
| STP4403 | P-Channel Enhancement Mode MOSFET |
| STP4407 | P-Channel Enhancement Mode MOSFET |
| STP4441 | P-Channel Enhancement Mode MOSFET |
| STP4803 | Dual P-Channel Enhancement Mode MOSFET |
| STP4931 | Dual P-Channel Enhancement Mode MOSFET |
| STP4953 | Dual P-Channel Enhancement Mode MOSFET |
| STP5950 | P-Channel Enhancement Mode MOSFET |
| STP605D | P-Channel Enhancement Mode MOSFET |