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STP4441
P Channel Enhancement Mode MOSFET
-10A
SCRIPTION
STP4441 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8
FEATURE
l -60V/-10.0A, RDS(ON) = 55mΩ (Typ.) @VGS =-10V
l -60V/-5.0A, RDS(ON) = 73mΩ @VGS = -4.
STP4441 Datasheet
