STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STP4803 |
|---|---|
| Manufacturer | STANSON |
| File Size | 686.87 KB |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Datasheet |
 STP4803 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STP400N4F6 | N-channel Power MOSFET | STMicroelectronics |
| STP40N03L-20 | N-Channel MOSFET | ST Microelectronics |
| STP40N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
| STP40N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
| STP40N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
| Part Number | Description |
|---|---|
| STP4189D | P-Channel Enhancement Mode MOSFET |
| STP4403 | P-Channel Enhancement Mode MOSFET |
| STP4407 | P-Channel Enhancement Mode MOSFET |
| STP4441 | P-Channel Enhancement Mode MOSFET |
| STP4931 | Dual P-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
