STP4803 Datasheet PDF

STANSON STP4803

STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits.

Part No.	STP4803
Datasheet	STP4803 Download
Manufacturer	STANSON
Description	Dual P-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE -30V/-5.2A, RDS(ON) = 38mΩ (Typ.) @VGS =-10V -30V/-4.0A, RDS(ON) = 52mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number STP4803 ※ Process Code : A ~ Z ; a ~ z Package SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Part Marking STP4803 Copyright © 2007, Stanson Corp. STP4803 2008. V1 STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -30 ±20 -5.2 -4.2 -30 -2.3 2.7 1.8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.