STP4403 Datasheet PDF

STANSON STP4403

STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

Part No.	STP4403
Datasheet	STP4403 Download
Manufacturer	STANSON
Description	P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE -20V/-10.0A, RDS(ON) = 30mΩ @VGS = -4.5V -20V/-8.6A, RDS(ON) = 35mΩ @VGS = -2.5V -20V/-7.6A, RDS(ON) = 48mΩ @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 Y: Year Code A: Week Code P: Package Code B: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STP4403 2010. V1 STP4403 P Channel Enhancement Mode MOSFET - 10.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -20 ±12 -10.0 -8.0 -30 -2.3 2.8 1.8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.