STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STN8822 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 607.36 KB |
| Description | MOSFET |
| Datasheet |
 STN8822 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STN8810 | (STN8810 - STN8812) Trio of Nomadik application processors bring multimedia to next-generation mobile devices | ST Microelectronics |
| STN8811 | (STN8810 - STN8812) Trio of Nomadik application processors bring multimedia to next-generation mobile devices | ST Microelectronics |
| STN8812 | (STN8810 - STN8812) Trio of Nomadik application processors bring multimedia to next-generation mobile devices | ST Microelectronics |
| STN8815 | Nomadik mobile multimedia application processor | ST Microelectronics |
| STN888 | LOW VOLTAGE PNP TRANSISTOR | ST Microelectronics |
| Part Number | Description |
|---|---|
| STN8822A | MOSFET |
| STN8882D | MOSFET |
| STN80T08 | 80A N-Channel Enhancement Mode MOSFET |
| STN1012 | MOSFET |
| STN1304 | 2A N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
