STN8822A Datasheet | Stanson Technology

Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 FEATURE 20V/6.0A, RDS(ON) = 25m-ohm @VGS =4.5V 20V/5.0A, RDS(ON) =42m-ohm @VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSOP-6 package design F：Year Code A: Produces Code X：Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STN8822A 2009. V1 Dual N Channel Enhancement Mode MOSFET 6.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage VDSS VGSS 20 +/-10 Unit V V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature...