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STN8882D - MOSFET

General Description

STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number STN8882D
Manufacturer Stanson Technology
File Size 895.65 KB
Description MOSFET
Datasheet download datasheet STN8882D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN8882D N Channel Enhancement Mode MOSFET 60.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE � 30V/ 35A, RDS(ON) = 5mΩ � @VGS = 10V � 30V/35A, RDS(ON) = 7mΩ @VGS = 4.