STN8882D Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 60.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE - 30V/ 35A, RDS(ON) = 5mΩ - @VGS = 10V - 30V/35A, RDS(ON) = 7mΩ @VGS = 4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2009, Stanson Corp. STN8882D 2009. V1 N Channel Enhancement Mode MOSFET 60.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃...