STN8822 Datasheet PDF | Stanson Technology

Stanson Technology STN8822

STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.

Part No.	STN8822
Datasheet	STN8822 Download
Manufacturer	Stanson Technology
Description	MOSFET
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DESCRIPTION

PIN CONFIGURATION TSSOP-8 FEATURE 20V/8.0A, RDS(ON) = 20m-ohm (Typ.) @VGS =4.5V 20V/7.0A, RDS(ON) =24m-ohm @VGS =2.5V 20V/3.0A, RDS(ON) =32m-ohm @VGS =1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSSOP-8 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STN8822 2009. V1 STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage VDSS VGSS 20 +/-12 V V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient ID IDM IS PD TJ TSTG RθJA 7.4 6.0 30 1.5 2.0 1.2 -40/140 -55/150 105 A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STN8822 2009.