STN1304 Datasheet PDF | Stanson Technology

Stanson Technology STN1304

STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

Part No.	STN1304
Datasheet	STN1304 Download
Manufacturer	Stanson Technology
Description	2A N-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOT-323 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE 20V/2.0A, RDS(ON) = 225mΩ @VGS = 4.5V 20V/1.5A, RDS(ON) = 315mΩ @VGS = 2.5V 20V/1.0A, RDS(ON) = 425mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design 3 04YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STN1304 2005. V1 STN1304 N Channel Enhancement Mode MOSFET 2.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM 20 ±12 2.0 1.5 10 V V A A Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient IS PD TJ TSTG RθJA 1.6 1.25 0.8 150 -55/150 105 A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STN1304 2005.