STN1304 Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE 20V/2.0A, RDS(ON) = 225mΩ @VGS = 4.5V 20V/1.5A, RDS(ON) = 315mΩ @VGS = 2.5V 20V/1.0A, RDS(ON) = 425mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design 04YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. STN1304 2005. V1 N Channel Enhancement Mode MOSFET 2.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM ±12 2.0 1.5 10 Continuous Source Current (Diode...