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STN2018 - MOSFET

General Description

STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN2018
Manufacturer Stanson Technology
File Size 1.12 MB
Description MOSFET
Datasheet download datasheet STN2018 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 20V/10A, RDS(ON) = 10mΩ @VGS = 4.5V 20V/7A, RDS(ON) = 15mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.