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STN2018
N Channel Enhancement Mode MOSFET
10.0A
DESCRIPTION
STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
20V/10A, RDS(ON) = 10mΩ @VGS = 4.5V
20V/7A, RDS(ON) = 15mΩ @VGS = 2.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
PART MARKING SOP-8
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.