Datasheet Details
| Part number | STN2018 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 1.12 MB |
| Description | MOSFET |
| Datasheet | STN2018-StansonTechnology.pdf |
|
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Overview: STN2018 N Channel Enhancement Mode MOSFET 10.0A.
| Part number | STN2018 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 1.12 MB |
| Description | MOSFET |
| Datasheet | STN2018-StansonTechnology.pdf |
|
|
|
STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circuits where high-side switching.
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