STN1810 Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook puter power management and other battery powered circuits where high-side switching, low inline power loss and resistance to transients are melded. PIN CONFIGURATION SOP-8 FEATURE 60V/8.0A, RDS(ON) = 140mΩ (Typ.) @VGS = 10V 60V/6.5.0A, RDS(ON) = 150mΩ @VGS = 7.0V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2007, Stanson Corp. STN1810 2009. V1 N Channel Enhancement Mode MOSFET 8.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID ±20 8.0 6.0 Continuous Source Current (Diode Conduction) Power...