Datasheet Details
| Part number | STN1810 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 957.03 KB |
| Description | MOSFET |
| Datasheet | STN1810-StansonTechnology.pdf |
|
|
Overview: STN1810 N Channel Enhancement Mode MOSFET 8.0A.
| Part number | STN1810 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 957.03 KB |
| Description | MOSFET |
| Datasheet | STN1810-StansonTechnology.pdf |
|
|
|
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These applications such as notebook computer power management and other battery powered circuits where high-side switching, low inline power loss and resistance to transients are melded.
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