STN18T20 Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION TO-252 FEATURE l- 200V/12A, RDS(ON) = 170mΩ(Typ.) @VGS = 10V l- Super high density cell design for extremely low RDS(ON) l- Exceptional on-resistance and maximum DC current capability l- TO-252 package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2008, Stanson Corp. STN18T20 2012. V1 N Channel Enhancement Mode MOSFET 18.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Symbol VDSS TA=25℃ TA=100℃ VGSS ID Typical ±30 18 11.4 36 Avalanche Current IAS 17 Power Dissipation TA=25℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to...