STN18T20 Datasheet PDF | Stanson Technology

Stanson Technology STN18T20

STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.

Part No.	STN18T20
Datasheet	STN18T20 Download
Manufacturer	Stanson Technology
Description	MOSFET
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DESCRIPTION

PIN CONFIGURATION TO-252 FEATURE l● 200V/12A, RDS(ON) = 170mΩ(Typ.) @VGS = 10V l● Super high density cell design for extremely low RDS(ON) l● Exceptional on-resistance and maximum DC current capability l● TO-252 package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2008, Stanson Corp. STN18T20 2012. V1 STN18T20 N Channel Enhancement Mode MOSFET 18.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Symbol VDSS TA=25℃ TA=100℃ VGSS ID IDM Typical 200 ±30 18 11.4 36 Avalanche Current IAS 17 Power Dissipation TA=25℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient PD TJ TSTG RθJA 112 150 -55/150 80 Unit V V A A mJ W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2008, Stanson Corp. STN18T20 2012.