STN3446 Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE - 20V/5.3A, RDS(ON)=48mΩ@VGS=4.5V - 20V/3.4A, RDS(ON)=65mΩ@VGS=2.5V - 20V/2.8A, RDS(ON)=90mΩ@VGS=1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional an-resistance and maximum DC current capability - TSOP-6P package design Y: Year Code W: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STN3446 2010. V1 N Channel Enhancement Mode MOSFET 5.3A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±12 TA=25℃ Continuous Drain Current (TJ=150℃) TA=70℃ Pulsed Drain...