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STN3456 - MOSFET

General Description

The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN3456
Manufacturer Stanson Technology
File Size 398.03 KB
Description MOSFET
Datasheet download datasheet STN3456 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN3456 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE ◆ 30V/6.0A, RDS(ON)=40mΩ@VGS=10V ◆ 30V/5.0A, RDS(ON)=50mΩ@VGS=4.