STN3456 Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE - 30V/6.0A, RDS(ON)=40mΩ@VGS=10V - 30V/5.0A, RDS(ON)=50mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional an-resistance and maximum DC current capability - TSOP-6P package design Y: Year Code W: Week Code ORDERING INFORMATION Part Number Package Part Marking STN3456ST6RG TSOP-6 56YW ※ Week Code Code : A ~ Z ; a ~ z ※ STN3456ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STN3456 2008. V1 N Channel Enhancement Mode MOSFET 6.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Drain-Source...