STN1012 Datasheet | Stanson Technology

Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION SOT-523 / SC-89 FEATURE - 20V/0.65A, RDS(ON) =380ohm@VGS =4.5V - 20V/0.55A, RDS(ON) =450ohm@VGS =2.5V - 20V/0.45A, RDS(ON) =800ohm@VGS =1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional low on-resistance and maximum DC current capability - SOT-523 / SC89 package design PART MARKING STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STN1012 2009. V1 Dual N Channel Enhancement Mode MOSFET 0.65A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage TA=25℃ Continuous Drain Current (TJ=150℃) TA=80℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃...