Datasheet Details
| Part number | STN1012 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 278.98 KB |
| Description | MOSFET |
| Datasheet | STN1012-StansonTechnology.pdf |
|
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Overview: STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A.
| Part number | STN1012 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 278.98 KB |
| Description | MOSFET |
| Datasheet | STN1012-StansonTechnology.pdf |
|
|
|
STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
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