STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
| Part number | STN1012 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 278.98 KB |
| Description | MOSFET |
| Datasheet |
 STN1012 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STN101050BL25 | TVS Diode ESD suppressor | EATON |
| STN1100 | Multiprotocol OBD-II to UART Interpreter | ScanToo |
| STN1110 | Multiprotocol OBD to UART Interpreter | OBD Solutions |
| STN1110-I | Multiprotocol OBD to UART Interpreter | OBD Solutions |
| STN1170 | Multiprotocol OBD to UART Interpreter | OBD Solutions |
| Part Number | Description |
|---|---|
| STN1304 | 2A N-Channel Enhancement Mode MOSFET |
| STN1810 | MOSFET |
| STN18T20 | MOSFET |
| STN2018 | MOSFET |
| STN3446 | MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
