DESCRIPTION
Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp. STN80T08 2011. V1 STN80T08 N Channel Enhancement Mode MOSFET 80.0A ABSOULTE MAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Avalanche Current Symbol VDSS TA=25℃ TA=70℃ VGSS ID IDM IAS Typical 80 ±25 80.0 300.0 370 80 Unit V V A A A Power Dissipation TA=25℃ PD 200 W Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TJ TSTG RθJA 175 -55/175 0.75 ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp.
Stanson Technology
