SSP20N60S Key Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 0.16
- Ultra Low Gate Charge (typ. Qg = 70nC)
- 100% avalanche tested
- Part: SSP20N60S
- Manufacturer: Super Semiconductor
- Size: 586.33 KB
Related Super Semiconductor Datasheets
| Part Number | Description |
|---|---|
| SSP60R099S2E | 600V N-Channel Super-Junction MOSFET |
| SSP60R099SFD | 600V N-Channel Super-Junction MOSFET |
| SSP60R280SFD | 600V N-Channel Super-Junction MOSFET |
| SSP65R099SFD | 650V N-Channel Super-Junction MOSFET |
| SSP65R130S2 | 650V N-Channel Super-Junction MOSFET |
SSP20N60S Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching...