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SSP60R099S2E Datasheet 600v N-channel Super-junction MOSFET

Manufacturer: Super Semiconductor

Overview: SSF60R099S2E/SSP60R099S2E 600V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF60R099S2E/SSP60R099S2E 600V N-Channel Super-Junction MOSFET.

Datasheet Details

Part number SSP60R099S2E
Manufacturer Super Semiconductor
File Size 722.18 KB
Description 600V N-Channel Super-Junction MOSFET
Datasheet SSP60R099S2E-SuperSemiconductor.pdf

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

Key Features

  • Multi-Epi process SJ-FET.
  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 85mΩ.
  • Ultra Low Gate Charge (typ. Qg = 54nC).
  • 100% avalanche tested SSF60R099S2E SSP60R099S2E Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-repe.

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