SSP65R190S2E
SSP65R190S2E is 650V N-Channel Super-Junction MOSFET manufactured by Super Semiconductor.
Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features
- Multi-Epi process SJ-FET
- 700V @TJ = 150 ℃
- Typ. RDS(on) = 150mΩ
- Ultra Low Gate Charge (typ. Qg = 31n C)
- 100% avalanche tested
SSF65R190S2E
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS EAS IAS dv/dt
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max)
Peak Diode Recovery dv/dt
(Note 3) d Vds/dt Drain Source voltage slope (Vds=480V)
Power Dissipation (TC = 25℃)
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/16” from Case for 10 Seconds
- Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75
650 20- 12.6- 60 ±30 540
15 50
-55 to +150
SSF65R190S2E Unit
A V m...
