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SSP65R130S2 - 650V N-Channel Super-Junction MOSFET

Download the SSP65R130S2 datasheet PDF. This datasheet also covers the SSP65R130S2-SUPER variant, as both devices belong to the same 650v n-channel super-junction mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Multi-Epi process SJ-FET.
  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 115mΩ.
  • Ultra Low Gate Charge (typ. Qg = 43nC).
  • 100% avalanche tested SSF65R130S2 SSP65R130S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-repet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSP65R130S2-SUPER-SEMI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSP65R130S2
Manufacturer Super Semiconductor
File Size 580.53 KB
Description 650V N-Channel Super-Junction MOSFET
Datasheet download datasheet SSP65R130S2 Datasheet

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Other Datasheets by Super Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSF65R130S2/SSP65R130S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF65R130S2/SSP65R130S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • Multi-Epi process SJ-FET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 115mΩ • Ultra Low Gate Charge (typ.