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DN3125 - N-Channel Depletion-Mode Vertical DMOS FETs

Features

  • ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature.

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Datasheet Details

Part number DN3125
Manufacturer Supertex
File Size 185.21 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Datasheet download datasheet DN3125 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com DN3125 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 250V * Die in wafer form. RDS(ON) (max) 20Ω IDSS (min) 200mA Order Number / Package Die* DN3125NW Features ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
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