Vertical DMOS FETs
►► High input impedance
►► Low input capacitance
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
►► Normally-on switches
►► Solid state relays
►► Constant current sources
►► Power supply circuits
The Supertex DN3525 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Part Number Package Option
DN3525N8-G TO-243AA (SOT-89) 2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Operating and storage
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or