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R9521 - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Datasheet Summary

Features

  • D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and wit.

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Datasheet Details

Part number R9521
Manufacturer Supertex
File Size 117.52 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet R9521 Datasheet
Additional preview pages of the R9521 datasheet.

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" §upertexinc. P-Channel Enhancement-Mode Vertical DMOS PowerFETs Ordering Information BVoss I BVDGS -60V ROS(ON) (max) 0.60 IO(ON) (min) -6.0A Order Number I Package 1TO-220 TO-92 JIRF9521 R9521 IRF9521 R9521 Preliminary Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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