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R9523 - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Download the R9523 datasheet PDF. This datasheet also covers the R9522 variant, as both devices belong to the same p-channel enhancement-mode vertical dmos power fets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R9522-Supertex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number R9523
Manufacturer Supertex
File Size 123.99 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet R9523 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
R95-105 (R95 Series) Socket NTE
R95-106A (R95 Series) Socket NTE
R95-115 (R95 Series) Socket NTE
R95-116 (R95 Series) Socket NTE
R95-123 (R95 Series) Socket NTE

Other Datasheets by Supertex

Part Number Description
R9521 P-Channel Enhancement-Mode Vertical DMOS Power FETs
R9522 P-Channel Enhancement-Mode Vertical DMOS Power FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
o §upertexinc. P-Channel Enhancement-Mode Vertical DMOS Power FETs IIRRF~95~2m2 R9523 Objective Ordering Information BVoss I ROS(ON) BVOGS (max) -100V o.sn -60V o.sn 'O(ON) (min) -5A -5A Order Number I Package 10-220 10-92 IRF9522 R9522 IRF9523 R9523 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.