R9521 - P-Channel Enhancement-Mode Vertical DMOS Power FETs
Supertex
Key Features
D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and wit.
P-Channel Enhancement-Mode Vertical DMOS Power FETs
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P-Channel Enhancement-Mode Vertical DMOS PowerFETs
Ordering Information
BVoss I BVDGS
-60V
ROS(ON) (max)
0.60
IO(ON) (min)
-6.0A
Order Number I Package
1TO-220
TO-92
JIRF9521
R9521
IRF9521 R9521
Preliminary
Features
D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
R9521 Datasheet
