R9522 - P-Channel Enhancement-Mode Vertical DMOS Power FETs
Supertex
Key Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.
P-Channel Enhancement-Mode Vertical DMOS Power FETs
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o §upertexinc.
P-Channel Enhancement-Mode Vertical DMOS Power FETs
IIRRF~95~2m2
R9523
Objective
Ordering Information
BVoss I ROS(ON) BVOGS (max)
-100V o.sn -60V o.sn
'O(ON)
(min)
-5A -5A
Order Number I Package
10-220
10-92
IRF9522
R9522
IRF9523
R9523
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
R9522 Datasheet
