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R9523 - P-Channel Enhancement-Mode Vertical DMOS Power FETs

This page provides the datasheet information for the R9523, a member of the R9522 P-Channel Enhancement-Mode Vertical DMOS Power FETs family.

Datasheet Summary

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet preview – R9523

Datasheet Details

Part number R9523
Manufacturer Supertex
File Size 123.99 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet R9523 Datasheet
Additional preview pages of the R9523 datasheet.

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Full PDF Text Transcription

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o §upertexinc. P-Channel Enhancement-Mode Vertical DMOS Power FETs IIRRF~95~2m2 R9523 Objective Ordering Information BVoss I ROS(ON) BVOGS (max) -100V o.sn -60V o.sn 'O(ON) (min) -5A -5A Order Number I Package 10-220 10-92 IRF9522 R9522 IRF9523 R9523 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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