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Supertex

R9523 Datasheet Preview

R9523 Datasheet

P-Channel Enhancement-Mode Vertical DMOS Power FETs

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o §upertexinc.
P-Channel Enhancement-Mode
Vertical DMOS Power FETs
IIRRF~95~2m2
R9523
Objective
Ordering Information
BVoss I ROS(ON)
BVOGS (max)
-100V o.sn
-60V o.sn
'O(ON)
(min)
-5A
-5A
Order Number I Package
10-220
10-92
IRF9522
R9522
IRF9523
R9523
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Applications
o Motor control
o Converters
o Amplifiers
o Switches
o Power supply circuits
o Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Package Options
GOS
TO·92
With TO·220
pinout
(lead bend
option: P11)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature'
*Oistance of 1.6 mm from case for 10 seconds.
±20V
-55°C to +150°C
300°C
9-3
GOS
TO·92
GOS
TO·220




Supertex

R9523 Datasheet Preview

R9523 Datasheet

P-Channel Enhancement-Mode Vertical DMOS Power FETs

No Preview Available !

Thermal Characteristics
Package
ID (continuous)" .. ID (pulsed)"
IRF9522
IRF9523
-5.0A
R9522
R9523
-0.55A
• 10 (continuous) IS limited by max rated Tj"
-20.0A
-7.0A
Power Dissipation
@Tc=25°C,
40W
~
°C/W
80
1W 125
IRF9522/IRF9523/R9522/R9523
~a
°C/W
3.1Z
170
IDR
-5.0A
-0.55A
"IDRM
-20.0A
-7.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1 and 2)
Symbol
BVoss
VGS(lh)
IGSS
loss
10(ON)
ROS(ON)
GFS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
IRF9522
R9522
IRF9523
R9523
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
-100
-so
-2.0
ON-State Drain Current
-5.0
Typ Max
-4.0
-500
-250
-
-1000
Static Drain-to-Source
ON-State Resistance
Forward Transconductance
0.8
0.9
Unit
V
V
nA
J.lA
A
0
U
CISS Input Capacitance
450
Coss
Common Source Output Capacitance
350 pF
CRSS
Reverse Transfer Capacitance
100
td(ON)
Turn-ON Delay Time
50
tr
td(OFF)
Rise Time
Turn-OFF Delay Time
100
ns
100
~ Fall Time
100
Vso Diode Forward Voltage Drop
-S.O V
trr Reverse Recovery Time
230 ns
Note 1,
Note 2:
.All D.C, parameters 100 V. tested at 25 C unless otherwise stated. (Pulse test. 300~s pulse. 2% duty cycle.)
All A.C. parameters sample tested.
Conditions
VGS = OV, ID = -250J.1A
Vos = VGS' 10 = -250J.1A
VGs =±20V,Vos =0
VGS = 0, Vos = Max Rating
VGS = 0, Vos = 0.8 Max Rating
Tc = 125°C
Vos > 10(ON) x ROS(ON) Max Rating
VGs =-10V
VGS = -10V, 10 = -3.5A
Vos > 10(ON) x ROS(ON) Max
10= -3.5A
VGS = 0, Vos = -25V
f = 1.0 MHz
Voo = 0.5BVoss
10 = -3.5A
Rs =500
Tc = 25°C, Is = -5.0A, VGS = OV
Tj = 150°C, IF = -S.OA,
dlF/dt = 100NJ.lS
Switching Waveforms and Test Circuit
Input 10%
td(ON)
Output _______--.I
10%
iI----PULSE---i
GENERATOR
I
I--~---<O SCOPE
I V-~~---r~~
I
I
I
I
I
i ' " IIL. __________
D.U.T.
9-4


Part Number R9523
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Maker Supertex
Total Page 2 Pages
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