Vertical DMOS Power FETs Quad Array
Q, + Q2 or Q3 + Q4
Same as 50-20 with 300 mil wide body.
Order Number' Package
o 4 independent channels
o 4 electrically isolated die
o Commercial and Military versions available
o Freedom from secondary breakdown
o Low power drive requirement
o Low C,SS and fast switching speeds
o High input impedance and high gain
o Complementary N- and P-Channel devices
o Motor control
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high Input impedance, low input capacitance, and
fast switching speeds are desired.
Refer to TNOSL and TPOSL Data Sheets for detailed characteris-
tics of N- and P-channel devices.
& IDA (single die) P-Channel
Power Dissipatio;' @ Tc = 25°C*
+ Pulse test 300 ~s pulse, 2% duty cycle.
t Total for package.