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TN01A - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Features

  • 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperat.

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Datasheet Details

Part number TN01A
Manufacturer Supertex
File Size 240.44 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN01A Datasheet
Additional preview pages of the TN01A datasheet.

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Full PDF Text Transcription

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(1) !iupertex inc. TN01A N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVDSS 1 BVDClS SOV 100V RDS(ON) (max) 30 30 IDlON) (min) 2A 2A VGS(lh) (max) l.SV 1.SV TQ-39 TN010SN2 TN0110N2 Order Number I Package TQ-92 DICE TN010SN3 TN010SND TN0110N3 TN0110ND Features 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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