TN01L Datasheet | Supertex

Features 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 plementary N- and P-channel devices TO- 39 Order Number I Package TO- 92 TN0102N2 TN0102N3 TN0104N2 TN0104N3 DICE TN0102ND TN0104ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This bination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex...