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TN0520 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Features

  • Low threshold.
  • 1.5V max.
  • High input impedance.
  • Low input capacitance.
  • 45pF typical.
  • Fast switching speeds.
  • Low on resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.
  • Complementary N- and P-channel devices.

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Datasheet preview – TN0520

Datasheet Details

Part number TN0520
Manufacturer Supertex
File Size 52.07 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN0520 Datasheet
Additional preview pages of the TN0520 datasheet.

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Full PDF Text Transcription

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TN0520 – OBSOLETE – TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 200V RDS(ON) (max) 10Ω 240V 10Ω † MIL visual screening available ID(ON) (min) 300mA 300mA VGS(th) (max) 1.5V 1.5V High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features ■ Low threshold —1.5V max.
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