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TN01L - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complementary N- and P-channel devices TO.
  • 39 Order Number I Package TO.
  • 92 TN0102N2 TN0102N3 TN0104N2 TN0104N3 DICE TN0102ND TN0104ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.

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Datasheet Details

Part number TN01L
Manufacturer Supertex
File Size 230.83 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN01L Datasheet

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Other Datasheets by Supertex

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TN0102 N-Channel Enhancement-Mode Vertical DMOS Power FETs
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TN0524 N-Channel Enhancement-Mode Vertical DMOS Power FETs

Full PDF Text Transcription (Reference)

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"§upertexinc. TN01L N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS 20V 40V ROS(ON) (max) 1.8g 1.8g IO(ON) (min) 2.0A 2.0A Features 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complementary N- and P-channel devices TO·39 Order Number I Package TO·92 TN0102N2 TN0102N3 TN0104N2 TN0104N3 DICE TN0102ND TN0104ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.