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TN0102 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • Low threshold.
  • 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices.

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Datasheet Details

Part number TN0102
Manufacturer Supertex
File Size 29.13 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN0102 Datasheet

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TN01A N-Channel Enhancement-Mode Vertical DMOS Power FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TN0102 TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 20V RDS(ON) (max) 1.8Ω VGS(th) (max) 1.6V ID(ON) (min) 2.0A 40V 1.8Ω 1.6V 2.0A 40V 2.0Ω 1.6V 2.0A * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available Features Low threshold —1.6V max.