TN0520 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Supertex

Key Features

Low threshold.
1.5V max.
High input impedance.
Low input capacitance.
45pF typical.
Fast switching speeds.
Low on resistance.
Free from secondary breakdown.
Low input and output leakage.
Complementary N- and P-channel devices.

TN0520 n-channel enhancement-mode vertical dmos power fets by Supertex - Datasheet Preview

Datasheet Details

Part number	TN0520
Manufacturer	Supertex
File Size	52.07 KB
Description	N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet	TN0520 Datasheet

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Other Datasheets by Supertex

Part Number	Description
TN0524	N-Channel Enhancement-Mode Vertical DMOS Power FETs
TN05C	N-Channel Enhancement-Mode Vertical DMOS Power FETs
TN0102	N-Channel Enhancement-Mode Vertical DMOS Power FETs
TN01A	N-Channel Enhancement-Mode Vertical DMOS Power FETs
TN01L	N-Channel Enhancement-Mode Vertical DMOS Power FETs

Full PDF Text Transcription (Reference)

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TN0520 – OBSOLETE – TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 200V RDS(ON) (max) 10Ω 240V 10Ω † MIL visual screening available ID(ON) (min) 300mA 300mA VGS(th) (max) 1.5V 1.5V High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features ■ Low threshold —1.5V max.