"§upertexinc.
I
N-Channel Enhancement-Mode
Vertical CMOS Power FETs
VN05E
Ordering Information
BVoss I
BVOGS
450V
500V
ROS(ON)
(max)
600
600
IO(ON)
(min)
150mA
150mA
TO-39
Order Number I Package
TO-92
Dice
VN0545N2
VN0545N3
VN0545ND
VN0550N2
VN0550N3
VN0550ND
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Applications
o Motor control
o Converters
o Amplifiers
o Switches
o Power supply circuits
o Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Advanced CMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
..
Package Options
(Notes 1 and 2)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature"
*Distance of 1.6 mm from case for 10 seconds.
±20V
8-51
TO·39
TO·92
Note 1: See Package Outline section for discrete pinouts.
Note 2: See Array section for quad pinouts.
